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Before applying any power, you can use a multimeter to check the conductivity between the different leads.

First, using the resistance setting, check that there is a large impedance (100's of kiloOhms - MegaOhms) between the source (S) and gate (G) terminals; and the G and drain (D) terminals. If the multimeter measures in the 100's of Ohms or less, then the gate oxide has been damaged and the device is burnt out. When I've destroyed MOSFETs, I've measured 3 Ohms between G-S.

Next check the channel conduction using the diode setting. A forward voltage drop should be measured when the positive lead (red) touches the source, and negative lead (black) touches the drain. This is the antiparallel diode intrinsic to the MOSFET. The measured drop should correspond to the low current value of the diode forward voltage indicated on the datasheet. When the leads are reversed and negative touches S, and positive touches D, the device should be an open circuit. If any forward voltage is measured from D-S, the device is damaged.

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What is a mosfet amplifier?

what is a mosfet amplifier


Why mosfet is called mosfet?

MOSFET is an acronym standing for Metal Oxide Semiconductor Field Effect Transistor.


The main factor which differentiate a de mosfet from an e only mosfet is the absence of?

conductiong channels


What are the Advantage of mosfet over fet?

MOSFET has high input impedance and offer input signal isolation from the circuit


Advantages and disadvantages of depletion MOSFET?

Since the logic operations of depletion MOSFET is the opposite to the enhancement MOSFET, the depletion MOSFET produces positive logic circuits, such as, buffer, AND, and OR. The most significant advantage of the positive logic circuits is that it can produce positive feedback easily so that a single depletion MOSFET can become a memory cell. In contrast, you will need at least two enhancement MOSFET transistor to produce the positive feedback to build a memory cell. The other advantages of depletion MOSFET are that it is free from sub-threshold leakage current and gate-oxide leakage current. Since there is always a potential difference of Vdd between the gate terminal and channel for an enhancement MOSFET to cause the gate-oxide leakage current, the gate oxide leakage current is unavoidable when the transistor shrinks in size and oxide layer becomes thinner. The depletion MOSFET does not have this problem because there is no potential difference between the gate and channel. As a enhancement MOSFET shrinking in size, there is no way to stop the subthreshold leakage current diffused across from source to drain because the drain and source terminals are closer physically. This is not a problem for depletion MOSFET because a pinched channel will stop the diffusion current completely. The depletion MOSFET is the ideal, perfect transistor. The only disadvantage of depletion MOSFET is its inability to produce negative logic operations.

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