Biasing is used in a transistor amplifier circuit in order to place the transistor as nearly as possible in the center of its linear region. Transistors have cutoff, linear, and saturation regions. Too little bias current, and you enter cutoff - Too much, and you saturate. Both conditions cause distortion when you attempt to use the transistor as an amplifier, as opposed to a switch.
A: Assuming a common emitter amplifier the base to emitter is a diode which has a very non linear curve by biasing the diode is brought to a linear region
ANSWER: NO please. BIASING has absolutely nothing to top with the base emitter diode exponential curve. It has to do with the fact that the operating point on the collector Ic Vc point will increase decrease with bias.
For a transistor to work as an amplifier it must be connected in active region of operation. ie. input (Base-Emitter) must be forward biased and output (Collector-Emitter) must be reverse biased.
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They aren't, it can and is done just fine with one.
voltage divider biasing
in BJT forwardbiasing & reverse biasing are carried out but in FET voltage divider biasing &self biasing are carried out.
There are 2 type of biasing in PN junction didoe Forward biasing Reverse biasing
in which of the following transistor bias methods is the input singel rectified? A. source biasing b.voltage divider biasing c.power supply biasing d.avc biasing
on forward biasing width of the depletion layer decreases whereas on reverse biasing the width of depletion layer increases.
Forward biasing can be satisfied when a positive polarity of a battery connect with P side and the negative connect with N side In the P-N junction, that is caused : The free electrons in the N side will pushed by negative charge, and holes move far of positive charge, after that we will have a barrier (small area of barrier between P and N) this biasing called Forward biasing, because of small resistance of barrier, the current will flow, we can use it as a switch. the Reverse biasing is the opesit of all these specifications.
REVERSE biasing. Parvezctg2@gmail.com.BD
It basically depends on the biasing of a transistor. In case of a MOSFET, it depends on the substrate biasing.
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Shem
in forward biasing depletion region width decreases and in reverse biasing it increases .